SIHL620S-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHL620S-GE3 is a SIHL620S-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 200V 5.2A 800mΩ@3.1A,10V 2V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 5.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@3.1A,10V
  • Power Dissipation (Pd): 3.1W;50W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 360pF@25V
  • Total Gate Charge (Qg@Vgs): 16nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SIHL620S-GE3

Model NumberSIHL620S-GE3
Model NameVishay Intertech SIHL620S-GE3
CategoryMOSFETs
BrandVishay Intertech
Description200V 5.2A 800mΩ@3.1A,10V 2V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)5.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)800mΩ@3.1A,10V
Power Dissipation (Pd)3.1W;50W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)360pF@25V
Total Gate Charge (Qg@Vgs)16nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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