SIHP18N50C-E3 by Vishay Intertech – Specifications

Vishay Intertech SIHP18N50C-E3 is a SIHP18N50C-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 500V 18A 223W 270mΩ@10V,10A 5V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 18A
  • Power Dissipation (Pd): 223W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 270mΩ@10V,10A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.942nF@25V
  • Total Gate Charge (Qg@Vgs): 76nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.

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Full Specifications of SIHP18N50C-E3

Model NumberSIHP18N50C-E3
Model NameVishay Intertech SIHP18N50C-E3
CategoryMOSFETs
BrandVishay Intertech
Description500V 18A 223W 270mΩ@10V,10A 5V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.640 grams / 0.093123 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)18A
Power Dissipation (Pd)223W
Drain Source On Resistance (RDS(on)@Vgs,Id)270mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.942nF@25V
Total Gate Charge (Qg@Vgs)76nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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