SIHU4N80E-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHU4N80E-GE3 is a SIHU4N80E-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 800V 4.3A 69W 1.27Ω@2A,10V 4V@250uA 1PCSNChannel IPAK(TO-251) MOSFETs ROHS. This product comes in a IPAK(TO-251) package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 800V
• Continuous Drain Current (Id): 4.3A
• Power Dissipation (Pd): 69W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 1.27Ω@2A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 622pF@100V
• Total Gate Charge (Qg@Vgs): 32nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.