SIHU7N60E-E3 by Vishay Intertech – Specifications

Vishay Intertech SIHU7N60E-E3 is a SIHU7N60E-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 7A 78W 600mΩ@3.5A,10V 4V@250uA 1PCSNChannel TO-251AA MOSFETs ROHS. This product comes in a TO-251AA package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 7A
  • Power Dissipation (Pd): 78W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@3.5A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 680pF@100V
  • Total Gate Charge (Qg@Vgs): 40nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIHU7N60E-E3

Full Specifications of SIHU7N60E-E3

Model NumberSIHU7N60E-E3
Model NameVishay Intertech SIHU7N60E-E3
CategoryMOSFETs
BrandVishay Intertech
Description600V 7A 78W 600mΩ@3.5A,10V 4V@250uA 1PCSNChannel TO-251AA MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-251AA
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)7A
Power Dissipation (Pd)78W
Drain Source On Resistance (RDS(on)@Vgs,Id)600mΩ@3.5A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)680pF@100V
Total Gate Charge (Qg@Vgs)40nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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