Vishay Intertech SIJ128LDP-T1-GE3 is a SIJ128LDP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 15.6mΩ@10A,10V 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 10.2A;25.5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 15.6mΩ@10A,10V
- Power Dissipation (Pd): 3.6W;22.3W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.25nF@40V
- Total Gate Charge (Qg@Vgs): 30nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SIJ128LDP-T1-GE3
Full Specifications of SIJ128LDP-T1-GE3
Model Number | SIJ128LDP-T1-GE3 |
Model Name | Vishay Intertech SIJ128LDP-T1-GE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 80V 15.6mΩ@10A,10V 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | PowerPAK-SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 80V |
Continuous Drain Current (Id) | 10.2A;25.5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 15.6mΩ@10A,10V |
Power Dissipation (Pd) | 3.6W;22.3W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.25nF@40V |
Total Gate Charge (Qg@Vgs) | 30nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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