SIJ188DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIJ188DP-T1-GE3 is a SIJ188DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 3.85mΩ@10A,10V 3.6V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 60V
• Continuous Drain Current (Id): 25.5A;92.4A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 3.85mΩ@10A,10V
• Power Dissipation (Pd): 5W;65.7W
• Gate Threshold Voltage (Vgs(th)@Id): 3.6V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.92nF@30V
• Total Gate Charge (Qg@Vgs): 44nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.14 grams.