SIJH112E-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIJH112E-T1-GE3 is a SIJH112E-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 2.8mΩ@20A,10V 4V@250uA 1PCSNChannel PowerPAK(8x8) MOSFETs ROHS. This product comes in a PowerPAK(8x8) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 23A;225A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.8mΩ@20A,10V
  • Power Dissipation (Pd): 3.3W;333W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 8.05nF@50V
  • Total Gate Charge (Qg@Vgs): 160nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.36 grams.

More on SIJH112E-T1-GE3

Full Specifications of SIJH112E-T1-GE3

Model NumberSIJH112E-T1-GE3
Model NameVishay Intertech SIJH112E-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 2.8mΩ@20A,10V 4V@250uA 1PCSNChannel PowerPAK(8x8) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.360 grams / 0.012699 oz
Package / CasePowerPAK(8x8)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)23A;225A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.8mΩ@20A,10V
Power Dissipation (Pd)3.3W;333W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)8.05nF@50V
Total Gate Charge (Qg@Vgs)160nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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