SIJH600E-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIJH600E-T1-GE3 is a SIJH600E-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 920mΩ@20A,10V 4V@250uA 1PCSNChannel PowerPAK(8x8) MOSFETs ROHS. This product comes in a PowerPAK(8x8) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 37A;373A
  • Power Dissipation (Pd): 3.3W;333W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 920mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.95nF@30V
  • Total Gate Charge (Qg@Vgs): 212nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SIJH600E-T1-GE3

Model NumberSIJH600E-T1-GE3
Model NameVishay Intertech SIJH600E-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 920mΩ@20A,10V 4V@250uA 1PCSNChannel PowerPAK(8x8) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK(8x8)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)37A;373A
Power Dissipation (Pd)3.3W;333W
Drain Source On Resistance (RDS(on)@Vgs,Id)920mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.95nF@30V
Total Gate Charge (Qg@Vgs)212nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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