SIJH800E-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIJH800E-T1-GE3 is a SIJH800E-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 1.55mΩ@20A,10V 4V@250uA 1PCSNChannel PowerPAK(8x8) MOSFETs ROHS. This product comes in a PowerPAK(8x8) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 80V
• Continuous Drain Current (Id): 29A;299A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 1.55mΩ@20A,10V
• Power Dissipation (Pd): 3.3W;333W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 10.23nF@40V
• Total Gate Charge (Qg@Vgs): 210nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.