SIR106DP-T1-RE3 by Vishay Intertech – Specifications

Vishay Intertech SIR106DP-T1-RE3 is a SIR106DP-T1-RE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 8mΩ@15A,10V 3.4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 16.1A;65.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@15A,10V
  • Power Dissipation (Pd): 3.2W;83.3W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.61nF@50V
  • Total Gate Charge (Qg@Vgs): 64nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SIR106DP-T1-RE3

Model NumberSIR106DP-T1-RE3
Model NameVishay Intertech SIR106DP-T1-RE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 8mΩ@15A,10V 3.4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)16.1A;65.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@15A,10V
Power Dissipation (Pd)3.2W;83.3W
Gate Threshold Voltage (Vgs(th)@Id)3.4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.61nF@50V
Total Gate Charge (Qg@Vgs)64nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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