SIR120DP-T1-RE3 by Vishay Intertech – Specifications

Vishay Intertech SIR120DP-T1-RE3 is a SIR120DP-T1-RE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 3.55mΩ@15A,10V 3.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 24.7A;106A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.55mΩ@15A,10V
  • Power Dissipation (Pd): 5.4W;100W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.15nF@40V
  • Total Gate Charge (Qg@Vgs): 94nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.6 grams.

More on SIR120DP-T1-RE3

Full Specifications of SIR120DP-T1-RE3

Model NumberSIR120DP-T1-RE3
Model NameVishay Intertech SIR120DP-T1-RE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 3.55mΩ@15A,10V 3.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.600 grams / 0.021164 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)24.7A;106A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.55mΩ@15A,10V
Power Dissipation (Pd)5.4W;100W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.15nF@40V
Total Gate Charge (Qg@Vgs)94nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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