SIR122DP-T1-RE3 by Vishay Intertech – Specifications

Vishay Intertech SIR122DP-T1-RE3 is a SIR122DP-T1-RE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 7.4mΩ@10A,10V 3.8V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 16.7A;59.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.4mΩ@10A,10V
  • Power Dissipation (Pd): 5.2W;65.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.95nF@40V
  • Total Gate Charge (Qg@Vgs): 44nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SIR122DP-T1-RE3

Model NumberSIR122DP-T1-RE3
Model NameVishay Intertech SIR122DP-T1-RE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 7.4mΩ@10A,10V 3.8V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)16.7A;59.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.4mΩ@10A,10V
Power Dissipation (Pd)5.2W;65.7W
Gate Threshold Voltage (Vgs(th)@Id)3.8V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.95nF@40V
Total Gate Charge (Qg@Vgs)44nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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