SIR178DP-T1-RE3 by Vishay Intertech – Specifications

Vishay Intertech SIR178DP-T1-RE3 is a SIR178DP-T1-RE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 0.4mΩ@30A,10V 1.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 100A;430A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 0.4mΩ@30A,10V
  • Power Dissipation (Pd): 6.3W;104W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 12.43nF@10V
  • Total Gate Charge (Qg@Vgs): 310nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

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Full Specifications of SIR178DP-T1-RE3

Model NumberSIR178DP-T1-RE3
Model NameVishay Intertech SIR178DP-T1-RE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 0.4mΩ@30A,10V 1.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)100A;430A
Drain Source On Resistance (RDS(on)@Vgs,Id)0.4mΩ@30A,10V
Power Dissipation (Pd)6.3W;104W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)12.43nF@10V
Total Gate Charge (Qg@Vgs)310nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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