SIR418DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIR418DP-T1-GE3 is a SIR418DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 40A 39W 5mΩ@10V,20A 2.4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 40A
• Power Dissipation (Pd): 39W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 5mΩ@10V,20A
• Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 2.41nF@20V
• Total Gate Charge (Qg@Vgs): 75nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.