SIR466DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIR466DP-T1-GE3 is a SIR466DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 40A 3.5mΩ@10V,15A 2.4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 40A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.5mΩ@10V,15A
  • Power Dissipation (Pd): 5W;54W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.73nF@15V
  • Total Gate Charge (Qg@Vgs): 65nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.247 grams.

Full Specifications of SIR466DP-T1-GE3

Model NumberSIR466DP-T1-GE3
Model NameVishay Intertech SIR466DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 40A 3.5mΩ@10V,15A 2.4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.247 grams / 0.008713 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)40A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.5mΩ@10V,15A
Power Dissipation (Pd)5W;54W
Gate Threshold Voltage (Vgs(th)@Id)2.4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.73nF@15V
Total Gate Charge (Qg@Vgs)65nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SIR466DP-T1-GE3 With Other 200 Models

Related Models - SIR466DP-T1-GE3 Alternative

Scroll to Top