SIR5802DP-T1-RE3 by Vishay Intertech – Specifications

Vishay Intertech SIR5802DP-T1-RE3 is a SIR5802DP-T1-RE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 2.9mΩ@20A,10V 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 33.6A;137.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9mΩ@20A,10V
  • Power Dissipation (Pd): 6.25W;104W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.02nF@40V
  • Total Gate Charge (Qg@Vgs): 60nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIR5802DP-T1-RE3

Full Specifications of SIR5802DP-T1-RE3

Model NumberSIR5802DP-T1-RE3
Model NameVishay Intertech SIR5802DP-T1-RE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 2.9mΩ@20A,10V 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)33.6A;137.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.9mΩ@20A,10V
Power Dissipation (Pd)6.25W;104W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.02nF@40V
Total Gate Charge (Qg@Vgs)60nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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