SIR582DP-T1-RE3 by Vishay Intertech – Specifications

Vishay Intertech SIR582DP-T1-RE3 is a SIR582DP-T1-RE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 3.4mΩ@15A,10V 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 28.9A;116A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.4mΩ@15A,10V
  • Power Dissipation (Pd): 5.6W;92.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.36nF@40V
  • Total Gate Charge (Qg@Vgs): 67nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.23 grams.

More on SIR582DP-T1-RE3

Full Specifications of SIR582DP-T1-RE3

Model NumberSIR582DP-T1-RE3
Model NameVishay Intertech SIR582DP-T1-RE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 3.4mΩ@15A,10V 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.230 grams / 0.008113 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)28.9A;116A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.4mΩ@15A,10V
Power Dissipation (Pd)5.6W;92.5W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.36nF@40V
Total Gate Charge (Qg@Vgs)67nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SIR582DP-T1-RE3 With Other 200 Models

Related Models - SIR582DP-T1-RE3 Alternative

Scroll to Top