SIR584DP-T1-RE3 by Vishay Intertech – Specifications

Vishay Intertech SIR584DP-T1-RE3 is a SIR584DP-T1-RE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 3.9mΩ@15A,10V 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 24.7A;100A
  • Power Dissipation (Pd): 5W;83.3W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.9mΩ@15A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.8nF@40V
  • Total Gate Charge (Qg@Vgs): 56nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SIR584DP-T1-RE3

Model NumberSIR584DP-T1-RE3
Model NameVishay Intertech SIR584DP-T1-RE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 3.9mΩ@15A,10V 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)24.7A;100A
Power Dissipation (Pd)5W;83.3W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.9mΩ@15A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.8nF@40V
Total Gate Charge (Qg@Vgs)56nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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