SIR610DP-T1-RE3 by Vishay Intertech – Specifications

Vishay Intertech SIR610DP-T1-RE3 is a SIR610DP-T1-RE3 from Vishay Intertech, part of the MOSFETs. It is designed for 200V 35.4A 31.9mΩ@10A,10V 104W 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 35.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 31.9mΩ@10A,10V
  • Power Dissipation (Pd): 104W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.38nF@100V
  • Total Gate Charge (Qg@Vgs): 38nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.141 grams.

More on SIR610DP-T1-RE3

Full Specifications of SIR610DP-T1-RE3

Model NumberSIR610DP-T1-RE3
Model NameVishay Intertech SIR610DP-T1-RE3
CategoryMOSFETs
BrandVishay Intertech
Description200V 35.4A 31.9mΩ@10A,10V 104W 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.141 grams / 0.004974 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)35.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)31.9mΩ@10A,10V
Power Dissipation (Pd)104W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.38nF@100V
Total Gate Charge (Qg@Vgs)38nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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