SIR624DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIR624DP-T1-GE3 is a SIR624DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 200V 18.6A 60mΩ@10A,10V 52W 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 18.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10A,10V
  • Power Dissipation (Pd): 52W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.11nF@100V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.136 grams.

More on SIR624DP-T1-GE3

Full Specifications of SIR624DP-T1-GE3

Model NumberSIR624DP-T1-GE3
Model NameVishay Intertech SIR624DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description200V 18.6A 60mΩ@10A,10V 52W 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.136 grams / 0.004797 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)18.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)60mΩ@10A,10V
Power Dissipation (Pd)52W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.11nF@100V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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