SIR662DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIR662DP-T1-GE3 is a SIR662DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 60A 2.7mΩ@20A,10V 2.5V@250uA 1PCSNChannel PowerPAK MOSFETs ROHS. This product comes in a PowerPAK package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 60A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.7mΩ@20A,10V
  • Power Dissipation (Pd): 6.25W;104W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.365nF@30V
  • Total Gate Charge (Qg@Vgs): 96nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.252 grams.

More on SIR662DP-T1-GE3

Full Specifications of SIR662DP-T1-GE3

Model NumberSIR662DP-T1-GE3
Model NameVishay Intertech SIR662DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 60A 2.7mΩ@20A,10V 2.5V@250uA 1PCSNChannel PowerPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.252 grams / 0.008889 oz
Package / CasePowerPAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)60A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.7mΩ@20A,10V
Power Dissipation (Pd)6.25W;104W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.365nF@30V
Total Gate Charge (Qg@Vgs)96nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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