SIR836DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIR836DP-T1-GE3 is a SIR836DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 21A 19mΩ@10V,10A 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 21A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 19mΩ@10V,10A
  • Power Dissipation (Pd): 3.9W;15.6W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 600pF@20V
  • Total Gate Charge (Qg@Vgs): 18nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.241 grams.

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Full Specifications of SIR836DP-T1-GE3

Model NumberSIR836DP-T1-GE3
Model NameVishay Intertech SIR836DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 21A 19mΩ@10V,10A 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.241 grams / 0.008501 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)21A
Drain Source On Resistance (RDS(on)@Vgs,Id)19mΩ@10V,10A
Power Dissipation (Pd)3.9W;15.6W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)600pF@20V
Total Gate Charge (Qg@Vgs)18nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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