SIR876BDP-T1-RE3 by Vishay Intertech – Specifications

Vishay Intertech SIR876BDP-T1-RE3 is a SIR876BDP-T1-RE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 10.8mΩ@10A,10V 2.4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 13.6A;51.4A
  • Power Dissipation (Pd): 5W;71.4W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10.8mΩ@10A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.04nF@50V
  • Total Gate Charge (Qg@Vgs): 65nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIR876BDP-T1-RE3

Full Specifications of SIR876BDP-T1-RE3

Model NumberSIR876BDP-T1-RE3
Model NameVishay Intertech SIR876BDP-T1-RE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 10.8mΩ@10A,10V 2.4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)13.6A;51.4A
Power Dissipation (Pd)5W;71.4W
Drain Source On Resistance (RDS(on)@Vgs,Id)10.8mΩ@10A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.04nF@50V
Total Gate Charge (Qg@Vgs)65nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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