SIR890DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIR890DP-T1-GE3 is a SIR890DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 50A 50W 2.9mΩ@10V,10A 2.6V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 50W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9mΩ@10V,10A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.6V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

More on SIR890DP-T1-GE3

Full Specifications of SIR890DP-T1-GE3

Model NumberSIR890DP-T1-GE3
Model NameVishay Intertech SIR890DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 50A 50W 2.9mΩ@10V,10A 2.6V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)50W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.9mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id)2.6V@250uA
Type1PCSNChannel

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