SIRA00DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIRA00DP-T1-GE3 is a SIRA00DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 100A 1mΩ@10V,20A 2.2V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 100A
  • Power Dissipation (Pd): 6.25W;104W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1mΩ@10V,20A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 11.7nF@15V
  • Total Gate Charge (Qg@Vgs): 220nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.131 grams.

More on SIRA00DP-T1-GE3

Full Specifications of SIRA00DP-T1-GE3

Model NumberSIRA00DP-T1-GE3
Model NameVishay Intertech SIRA00DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 100A 1mΩ@10V,20A 2.2V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.131 grams / 0.004621 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)100A
Power Dissipation (Pd)6.25W;104W
Drain Source On Resistance (RDS(on)@Vgs,Id)1mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)11.7nF@15V
Total Gate Charge (Qg@Vgs)220nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SIRA00DP-T1-GE3 With Other 200 Models

Related Models - SIRA00DP-T1-GE3 Alternative

Scroll to Top