Vishay Intertech SIRA66DP-T1-GE3 is a SIRA66DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 50A 2.3mΩ@15A,10V 62.5W 2.2V@1mA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 50A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.3mΩ@15A,10V
- Power Dissipation (Pd): 62.5W
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@1mA
- Type: 1PCSNChannel
- Total Gate Charge (Qg@Vgs): 66nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SIRA66DP-T1-GE3
Full Specifications of SIRA66DP-T1-GE3
Model Number | SIRA66DP-T1-GE3 |
Model Name | Vishay Intertech SIRA66DP-T1-GE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 30V 50A 2.3mΩ@15A,10V 62.5W 2.2V@1mA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | PowerPAK-SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 50A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.3mΩ@15A,10V |
Power Dissipation (Pd) | 62.5W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.2V@1mA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | - |
Total Gate Charge (Qg@Vgs) | 66nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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