SIRA80DP-T1-RE3 by Vishay Intertech – Specifications

Vishay Intertech SIRA80DP-T1-RE3 is a SIRA80DP-T1-RE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 100A 104W 0.62mΩ@20A,10V 2.2V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 100A
  • Power Dissipation (Pd): 104W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 0.62mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.53nF@15V
  • Total Gate Charge (Qg@Vgs): 188nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.25 grams.

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Full Specifications of SIRA80DP-T1-RE3

Model NumberSIRA80DP-T1-RE3
Model NameVishay Intertech SIRA80DP-T1-RE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 100A 104W 0.62mΩ@20A,10V 2.2V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.250 grams / 0.008819 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)100A
Power Dissipation (Pd)104W
Drain Source On Resistance (RDS(on)@Vgs,Id)0.62mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.53nF@15V
Total Gate Charge (Qg@Vgs)188nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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