SIRA99DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIRA99DP-T1-GE3 is a SIRA99DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 1.7mΩ@20A,10V 2.5V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 47.9A;195A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.7mΩ@20A,10V
  • Power Dissipation (Pd): 6.35W;104W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 10.955nF@15V
  • Total Gate Charge (Qg@Vgs): 260nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.15 grams.

More on SIRA99DP-T1-GE3

Full Specifications of SIRA99DP-T1-GE3

Model NumberSIRA99DP-T1-GE3
Model NameVishay Intertech SIRA99DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 1.7mΩ@20A,10V 2.5V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.150 grams / 0.005291 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)47.9A;195A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.7mΩ@20A,10V
Power Dissipation (Pd)6.35W;104W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)10.955nF@15V
Total Gate Charge (Qg@Vgs)260nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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