SIS106DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIS106DN-T1-GE3 is a SIS106DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 18.5mΩ@4A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 60V
• Continuous Drain Current (Id): 9.8A;16A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 18.5mΩ@4A,10V
• Power Dissipation (Pd): 3.2W;24W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 540pF@30V
• Total Gate Charge (Qg@Vgs): 13.5nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.