SIS407ADN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIS407ADN-T1-GE3 is a SIS407ADN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 18A 9mΩ@15A,4.5V 1V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 18A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@15A,4.5V
  • Power Dissipation (Pd): 3.7W;39.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 5.875nF@10V
  • Total Gate Charge (Qg@Vgs): 168nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.063 grams.

More on SIS407ADN-T1-GE3

Full Specifications of SIS407ADN-T1-GE3

Model NumberSIS407ADN-T1-GE3
Model NameVishay Intertech SIS407ADN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 18A 9mΩ@15A,4.5V 1V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.063 grams / 0.002222 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)18A
Drain Source On Resistance (RDS(on)@Vgs,Id)9mΩ@15A,4.5V
Power Dissipation (Pd)3.7W;39.1W
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)5.875nF@10V
Total Gate Charge (Qg@Vgs)168nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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