SIS410DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIS410DN-T1-GE3 is a SIS410DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 35A 4.8mΩ@10V,20A 2.5V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 35A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8mΩ@10V,20A
  • Power Dissipation (Pd): 3.8W;52W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.6nF@10V
  • Total Gate Charge (Qg@Vgs): 41nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.176 grams.

More on SIS410DN-T1-GE3

Full Specifications of SIS410DN-T1-GE3

Model NumberSIS410DN-T1-GE3
Model NameVishay Intertech SIS410DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 35A 4.8mΩ@10V,20A 2.5V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.176 grams / 0.006208 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)35A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.8mΩ@10V,20A
Power Dissipation (Pd)3.8W;52W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.6nF@10V
Total Gate Charge (Qg@Vgs)41nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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