SIS434DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIS434DN-T1-GE3 is a SIS434DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 35A 7.6mΩ@10V,16.2A 2.2V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 35A
  • Power Dissipation (Pd): 3.8W;52W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.6mΩ@10V,16.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.53nF@20V
  • Total Gate Charge (Qg@Vgs): 40nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.176 grams.

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Full Specifications of SIS434DN-T1-GE3

Model NumberSIS434DN-T1-GE3
Model NameVishay Intertech SIS434DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 35A 7.6mΩ@10V,16.2A 2.2V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.176 grams / 0.006208 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)35A
Power Dissipation (Pd)3.8W;52W
Drain Source On Resistance (RDS(on)@Vgs,Id)7.6mΩ@10V,16.2A
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.53nF@20V
Total Gate Charge (Qg@Vgs)40nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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