SIS436DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIS436DN-T1-GE3 is a SIS436DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 25V 16A 3.5W 10.5mΩ@10V,10A 2.3V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 16A
  • Power Dissipation (Pd): 3.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10.5mΩ@10V,10A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.3V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.176 grams.

More on SIS436DN-T1-GE3

Full Specifications of SIS436DN-T1-GE3

Model NumberSIS436DN-T1-GE3
Model NameVishay Intertech SIS436DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description25V 16A 3.5W 10.5mΩ@10V,10A 2.3V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.176 grams / 0.006208 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)16A
Power Dissipation (Pd)3.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)10.5mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id)2.3V@250uA
Type1PCSNChannel

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