SIS447DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIS447DN-T1-GE3 is a SIS447DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 18A 7.1mΩ@20A,10V 52W 1.2V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 18A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.1mΩ@20A,10V
  • Power Dissipation (Pd): 52W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 5.59nF@10V
  • Total Gate Charge (Qg@Vgs): 181nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIS447DN-T1-GE3

Full Specifications of SIS447DN-T1-GE3

Model NumberSIS447DN-T1-GE3
Model NameVishay Intertech SIS447DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 18A 7.1mΩ@20A,10V 52W 1.2V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)18A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.1mΩ@20A,10V
Power Dissipation (Pd)52W
Gate Threshold Voltage (Vgs(th)@Id)1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)5.59nF@10V
Total Gate Charge (Qg@Vgs)181nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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