SIS4604DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIS4604DN-T1-GE3 is a SIS4604DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 9.5mΩ@10A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 14.6A;44.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.5mΩ@10A,10V
  • Power Dissipation (Pd): 3.6W;33.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 960pF@30V
  • Total Gate Charge (Qg@Vgs): 22nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIS4604DN-T1-GE3

Full Specifications of SIS4604DN-T1-GE3

Model NumberSIS4604DN-T1-GE3
Model NameVishay Intertech SIS4604DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 9.5mΩ@10A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)14.6A;44.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.5mΩ@10A,10V
Power Dissipation (Pd)3.6W;33.7W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)960pF@30V
Total Gate Charge (Qg@Vgs)22nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SIS4604DN-T1-GE3 With Other 200 Models

Related Models - SIS4604DN-T1-GE3 Alternative

Scroll to Top