SIS606BDN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIS606BDN-T1-GE3 is a SIS606BDN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 17.4mΩ@10A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 9.4A;35.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 17.4mΩ@10A,10V
  • Power Dissipation (Pd): 3.7W;52W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.47nF@50V
  • Total Gate Charge (Qg@Vgs): 30nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIS606BDN-T1-GE3

Full Specifications of SIS606BDN-T1-GE3

Model NumberSIS606BDN-T1-GE3
Model NameVishay Intertech SIS606BDN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 17.4mΩ@10A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)9.4A;35.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)17.4mΩ@10A,10V
Power Dissipation (Pd)3.7W;52W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.47nF@50V
Total Gate Charge (Qg@Vgs)30nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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