SIS892DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIS892DN-T1-GE3 is a SIS892DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 30A 29mΩ@10A,10V 3V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 29mΩ@10A,10V
  • Power Dissipation (Pd): 3.7W;52W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 611pF@50V
  • Total Gate Charge (Qg@Vgs): 21.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.176 grams.

More on SIS892DN-T1-GE3

Full Specifications of SIS892DN-T1-GE3

Model NumberSIS892DN-T1-GE3
Model NameVishay Intertech SIS892DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 30A 29mΩ@10A,10V 3V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.176 grams / 0.006208 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)29mΩ@10A,10V
Power Dissipation (Pd)3.7W;52W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)611pF@50V
Total Gate Charge (Qg@Vgs)21.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SIS892DN-T1-GE3 With Other 200 Models

Related Models - SIS892DN-T1-GE3 Alternative

Scroll to Top