SIS903DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIS903DN-T1-GE3 is a SIS903DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 6A 20.1mΩ@5A,4.5V 1V@250uA 2 P-Channel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 6A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 20.1mΩ@5A,4.5V
• Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
• Type: 2 P-Channel
• Input Capacitance (Ciss@Vds): 2.565nF@10V
• Total Gate Charge (Qg@Vgs): 42nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.