SISA24DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISA24DN-T1-GE3 is a SISA24DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 25V 60A 1.4mΩ@15A,10V 52W 2.1V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 60A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4mΩ@15A,10V
  • Power Dissipation (Pd): 52W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.1V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.65nF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.078 grams.

More on SISA24DN-T1-GE3

Full Specifications of SISA24DN-T1-GE3

Model NumberSISA24DN-T1-GE3
Model NameVishay Intertech SISA24DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description25V 60A 1.4mΩ@15A,10V 52W 2.1V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.078 grams / 0.002751 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)60A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.4mΩ@15A,10V
Power Dissipation (Pd)52W
Gate Threshold Voltage (Vgs(th)@Id)2.1V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.65nF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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