SISA66DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISA66DN-T1-GE3 is a SISA66DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 40A 2.3mΩ@15A,10V 52W 2.2V@1mA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 40A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.3mΩ@15A,10V
  • Power Dissipation (Pd): 52W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@1mA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.014nF@15V
  • Total Gate Charge (Qg@Vgs): 66nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SISA66DN-T1-GE3

Full Specifications of SISA66DN-T1-GE3

Model NumberSISA66DN-T1-GE3
Model NameVishay Intertech SISA66DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 40A 2.3mΩ@15A,10V 52W 2.2V@1mA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)40A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.3mΩ@15A,10V
Power Dissipation (Pd)52W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@1mA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.014nF@15V
Total Gate Charge (Qg@Vgs)66nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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