SISA96DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISA96DN-T1-GE3 is a SISA96DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 16A 8.8mΩ@10V,10A 26.5W 2.2V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 16A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.8mΩ@10V,10A
  • Power Dissipation (Pd): 26.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.385nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.176 grams.

More on SISA96DN-T1-GE3

Full Specifications of SISA96DN-T1-GE3

Model NumberSISA96DN-T1-GE3
Model NameVishay Intertech SISA96DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 16A 8.8mΩ@10V,10A 26.5W 2.2V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.176 grams / 0.006208 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)16A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.8mΩ@10V,10A
Power Dissipation (Pd)26.5W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.385nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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