SISB46DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISB46DN-T1-GE3 is a SISB46DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 34A 23W 11.71mΩ@10V,5A 2.2V@250uA 2 N-Channel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 34A
  • Power Dissipation (Pd): 23W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11.71mΩ@10V,5A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.176 grams.

More on SISB46DN-T1-GE3

Full Specifications of SISB46DN-T1-GE3

Model NumberSISB46DN-T1-GE3
Model NameVishay Intertech SISB46DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 34A 23W 11.71mΩ@10V,5A 2.2V@250uA 2 N-Channel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.176 grams / 0.006208 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)34A
Power Dissipation (Pd)23W
Drain Source On Resistance (RDS(on)@Vgs,Id)11.71mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type2 N-Channel

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