SISF02DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISF02DN-T1-GE3 is a SISF02DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 25V 3.5mΩ@7A,10V 2.3V@250uA 2 N-Channel PowerPAK1212-8SCD MOSFETs ROHS. This product comes in a PowerPAK1212-8SCD package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 25V
• Configuration: Common Drain
• Continuous Drain Current (Id): 30.5A;60A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 3.5mΩ@7A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 2.3V@250uA
• Type: 2 N-Channel
• Input Capacitance (Ciss@Vds): 2.65nF@10V
• Total Gate Charge (Qg@Vgs): 56nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.