SISH101DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISH101DN-T1-GE3 is a SISH101DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 7.2mΩ@15A,10V 2.5V@250uA 1PCSPChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 16.9A;35A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.2mΩ@15A,10V
  • Power Dissipation (Pd): 3.7W;52W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 3.595nF@15V
  • Total Gate Charge (Qg@Vgs): 102nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.158 grams.

More on SISH101DN-T1-GE3

Full Specifications of SISH101DN-T1-GE3

Model NumberSISH101DN-T1-GE3
Model NameVishay Intertech SISH101DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 7.2mΩ@15A,10V 2.5V@250uA 1PCSPChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.158 grams / 0.005573 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)16.9A;35A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.2mΩ@15A,10V
Power Dissipation (Pd)3.7W;52W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)3.595nF@15V
Total Gate Charge (Qg@Vgs)102nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SISH101DN-T1-GE3 With Other 200 Models

Related Models - SISH101DN-T1-GE3 Alternative

Scroll to Top