SISH108DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISH108DN-T1-GE3 is a SISH108DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 14A 4.9mΩ@22A,10V 1.5W 2V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 14A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 4.9mΩ@22A,10V
• Power Dissipation (Pd): 1.5W
• Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
• Type: 1PCSNChannel
• Total Gate Charge (Qg@Vgs): [email protected]
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.