SISH110DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISH110DN-T1-GE3 is a SISH110DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 13.5A 5.3mΩ@21.1A,10V 1.5W 2.5V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 13.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.3mΩ@21.1A,10V
  • Power Dissipation (Pd): 1.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SISH110DN-T1-GE3

Full Specifications of SISH110DN-T1-GE3

Model NumberSISH110DN-T1-GE3
Model NameVishay Intertech SISH110DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 13.5A 5.3mΩ@21.1A,10V 1.5W 2.5V@250uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)13.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.3mΩ@21.1A,10V
Power Dissipation (Pd)1.5W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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