SISH129DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISH129DN-T1-GE3 is a SISH129DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 11.4mΩ@14.4A,10V 2.8V@250uA 1PCSPChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 14.4A;35A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11.4mΩ@14.4A,10V
  • Power Dissipation (Pd): 3.8W;52.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.8V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 3.345nF@15V
  • Total Gate Charge (Qg@Vgs): 71nC@10V
  • Operating Temperature: -50℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SISH129DN-T1-GE3

Full Specifications of SISH129DN-T1-GE3

Model NumberSISH129DN-T1-GE3
Model NameVishay Intertech SISH129DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 11.4mΩ@14.4A,10V 2.8V@250uA 1PCSPChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)14.4A;35A
Drain Source On Resistance (RDS(on)@Vgs,Id)11.4mΩ@14.4A,10V
Power Dissipation (Pd)3.8W;52.1W
Gate Threshold Voltage (Vgs(th)@Id)2.8V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)3.345nF@15V
Total Gate Charge (Qg@Vgs)71nC@10V
Operating Temperature-50℃~+150℃@(Tj)

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