SISH410DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISH410DN-T1-GE3 is a SISH410DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 4.8mΩ@20A,10V 2.5V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 22A;35A
• Power Dissipation (Pd): 3.8W;52W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8mΩ@20A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.6nF@10V
• Total Gate Charge (Qg@Vgs): 41nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.