SISH615ADN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISH615ADN-T1-GE3 is a SISH615ADN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 4.4mΩ@20A,10V 1.5V@250uA 1PCSPChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 22.1A;35A
  • Power Dissipation (Pd): 3.7W;52W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.4mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 5.59nF@10V
  • Total Gate Charge (Qg@Vgs): 183nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.076 grams.

More on SISH615ADN-T1-GE3

Full Specifications of SISH615ADN-T1-GE3

Model NumberSISH615ADN-T1-GE3
Model NameVishay Intertech SISH615ADN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 4.4mΩ@20A,10V 1.5V@250uA 1PCSPChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.076 grams / 0.002681 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)22.1A;35A
Power Dissipation (Pd)3.7W;52W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.4mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)5.59nF@10V
Total Gate Charge (Qg@Vgs)183nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SISH615ADN-T1-GE3 With Other 200 Models

Related Models - SISH615ADN-T1-GE3 Alternative

Scroll to Top