SISH625DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISH625DN-T1-GE3 is a SISH625DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 7mΩ@15A,10V 2.5V@250uA 1PCSPChannel PowerPAK1212-8SH MOSFETs ROHS. This product comes in a PowerPAK1212-8SH package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 17.3A;35A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@15A,10V
  • Power Dissipation (Pd): 3.7W;52W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 4.427nF@15V
  • Total Gate Charge (Qg@Vgs): 126nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.

More on SISH625DN-T1-GE3

Full Specifications of SISH625DN-T1-GE3

Model NumberSISH625DN-T1-GE3
Model NameVishay Intertech SISH625DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 7mΩ@15A,10V 2.5V@250uA 1PCSPChannel PowerPAK1212-8SH MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.030 grams / 0.001058 oz
Package / CasePowerPAK1212-8SH
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)17.3A;35A
Drain Source On Resistance (RDS(on)@Vgs,Id)7mΩ@15A,10V
Power Dissipation (Pd)3.7W;52W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)4.427nF@15V
Total Gate Charge (Qg@Vgs)126nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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